APT13005T-G1
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- Mfr.Part #
- APT13005T-G1
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 4A TO220-3
- Stock
- 5,227
- In Stock ：
- 5,227
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 4MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 2A 5V
- Collector Base Voltage (VCBO) :
- 10V
- Supplier Device Package :
- TO-220AB
- Transistor Type :
- NPN
- Max Collector Current :
- 4A
- Packaging :
- Tube
- Current - Collector (Ic) (Max) :
- 4A
- Height :
- 16.1mm
- Voltage - Collector Emitter Breakdown (Max) :
- 450V
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 9V
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 1A, 4A
- Min Operating Temperature :
- -65°C
- Width :
- 4.5mm
- Collector Emitter Voltage (VCEO) :
- 900mV
- Max Power Dissipation :
- 75W
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 450V
- Length :
- 10.2mm
- Collector Emitter Saturation Voltage :
- 900mV
- Package / Case :
- TO-220-3
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Factory Lead Time :
- 20 Weeks
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Power - Max :
- 75W
- Published :
- 2012
- Operating Temperature :
- -65°C~150°C TJ
- Datasheets
- APT13005T-G1
NPN -65°C~150°C TJ TO-220-3 Tube Through Hole
APT13005T-G1 Overview
In this device, the DC current gain is 8 @ 2A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 900mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 900mV @ 1A, 4A.With the emitter base voltage set at 9V, an efficient operation can be achieved.Product comes in the supplier's device package TO-220AB.There is a 450V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
APT13005T-G1 Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 1A, 4A
the emitter base voltage is kept at 9V
the supplier device package of TO-220AB
APT13005T-G1 Applications
There are a lot of Diodes Incorporated
APT13005T-G1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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