APT13005DT-G1
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- Mfr.Part #
- APT13005DT-G1
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 4A TO220-3
- Stock
- 27,937
- In Stock ：
- 27,937
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 450V
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 75W
- Operating Temperature :
- -65°C~150°C TJ
- Current - Collector (Ic) (Max) :
- 4A
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 4MHz
- Transition Frequency :
- 4MHz
- Collector Emitter Breakdown Voltage :
- 450V
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 1A, 4A
- Mount :
- Through Hole
- Factory Lead Time :
- 5 Weeks
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 9V
- Max Collector Current :
- 4A
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 900mV
- Package / Case :
- TO-220-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 2A 5V
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- not_compliant
- Transistor Type :
- NPN
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e3
- Weight :
- 2.299997g
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- APT13005DT-G1
NPN -65°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Bulk Through Hole
APT13005DT-G1 Overview
This device has a DC current gain of 8 @ 2A 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 900mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 9V to achieve high efficiency.In this part, there is a transition frequency of 4MHz.The maximum collector current is 4A volts.
APT13005DT-G1 Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 1A, 4A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
APT13005DT-G1 Applications
There are a lot of Diodes Incorporated
APT13005DT-G1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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