APT13005DI-G1

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Mfr.Part #
APT13005DI-G1
Manufacturer
Diodes Incorporated
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS NPN 450V 4A TO251
Stock
38,003
In Stock :
38,003

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
9V
Max Power Dissipation :
25W
Transition Frequency :
4MHz
Max Collector Current :
4A
Collector Emitter Breakdown Voltage :
450V
Element Configuration :
Single
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material :
SILICON
Collector Emitter Saturation Voltage :
900mV
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Packaging :
Bulk
Collector Emitter Voltage (VCEO) :
450V
Mount :
Through Hole
Polarity/Channel Type :
NPN
Transistor Application :
SWITCHING
Number of Terminations :
3
Operating Temperature :
-65°C~150°C TJ
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 2A 5V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2014
Contact Plating :
Tin
Vce Saturation (Max) @ Ib, Ic :
900mV @ 1A, 4A
Current - Collector (Ic) (Max) :
4A
Weight :
343.085929mg
Reach Compliance Code :
not_compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Factory Lead Time :
15 Weeks
Transistor Type :
NPN
Number of Elements :
1
JESD-609 Code :
e3
Gain Bandwidth Product :
4MHz
JESD-30 Code :
R-PSIP-T3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
APT13005DI-G1
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated APT13005DI-G1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, APT13005DI-G1 pinout, APT13005DI-G1 datasheet PDF, APT13005DI-G1 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated APT13005DI-G1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated APT13005DI-G1


NPN -65°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

APT13005DI-G1 Overview


In this device, the DC current gain is 8 @ 2A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 900mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 900mV @ 1A, 4A.With the emitter base voltage set at 9V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.

APT13005DI-G1 Features


the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 1A, 4A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz


APT13005DI-G1 Applications


There are a lot of Diodes Incorporated
APT13005DI-G1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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