APT13005DI-G1
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- Mfr.Part #
- APT13005DI-G1
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 450V 4A TO251
- Stock
- 38,003
- In Stock ：
- 38,003
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 9V
- Gain Bandwidth Product :
- 4MHz
- Published :
- 2014
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 1A, 4A
- Collector Emitter Voltage (VCEO) :
- 450V
- Max Collector Current :
- 4A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 2A 5V
- Packaging :
- Bulk
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Saturation Voltage :
- 900mV
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Current - Collector (Ic) (Max) :
- 4A
- Transition Frequency :
- 4MHz
- Weight :
- 343.085929mg
- Collector Emitter Breakdown Voltage :
- 450V
- Max Power Dissipation :
- 25W
- Transistor Type :
- NPN
- Reach Compliance Code :
- not_compliant
- JESD-30 Code :
- R-PSIP-T3
- Datasheets
- APT13005DI-G1
APT13005DI-G1 Documents
NPN -65°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
APT13005DI-G1 Overview
In this device, the DC current gain is 8 @ 2A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 900mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 900mV @ 1A, 4A.With the emitter base voltage set at 9V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
APT13005DI-G1 Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 1A, 4A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
APT13005DI-G1 Applications
There are a lot of Diodes Incorporated
APT13005DI-G1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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