APT13003LZTR-G1
- Mfr.Part #
- APT13003LZTR-G1
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 450V 0.8A TO92
- Stock
- 119,118
- In Stock :
- 119,118
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 40mA, 200mA
- Published :
- 2017
- Supplier Device Package :
- TO-92
- Min Operating Temperature :
- -55°C
- Factory Lead Time :
- 15 Weeks
- Height :
- 4.7mm
- Emitter Base Voltage (VEBO) :
- 9V
- Packaging :
- Tape and Box (TB)
- Length :
- 4.7mm
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 450V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 6 @ 300mA 10V
- Collector Emitter Voltage (VCEO) :
- 500mV
- Max Collector Current :
- 800mA
- Power - Max :
- 800mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Max Operating Temperature :
- 150°C
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector (Ic) (Max) :
- 800mA
- Max Power Dissipation :
- 800mW
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Contact Plating :
- Tin
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Breakdown Voltage :
- 450V
- Mounting Type :
- Through Hole
- Width :
- 3.7mm
- Datasheets
- APT13003LZTR-G1

NPN -55°C~150°C TJ TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
APT13003LZTR-G1 Overview
In this device, the DC current gain is 6 @ 300mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 40mA, 200mA.With the emitter base voltage set at 9V, an efficient operation can be achieved.Product comes in the supplier's device package TO-92.There is a 450V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
APT13003LZTR-G1 Features
the DC current gain for this device is 6 @ 300mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 40mA, 200mA
the emitter base voltage is kept at 9V
the supplier device package of TO-92
APT13003LZTR-G1 Applications
There are a lot of Diodes Incorporated
APT13003LZTR-G1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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