APT13003DZTR-G1
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- Mfr.Part #
- APT13003DZTR-G1
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 450V 1.5A TO92
- Stock
- 28,176
- In Stock ：
- 28,176
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 1.5A
- Collector Emitter Saturation Voltage :
- 400mV
- Collector Base Voltage (VCBO) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 1.1W
- Height :
- 4.7mm
- Voltage - Collector Emitter Breakdown (Max) :
- 450V
- Max Power Dissipation :
- 1.1W
- Max Breakdown Voltage :
- 450V
- Max Operating Temperature :
- 150°C
- Packaging :
- Tape and Box (TB)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Emitter Base Voltage (VEBO) :
- 9V
- Mount :
- Through Hole
- Frequency - Transition :
- 4MHz
- Min Operating Temperature :
- -65°C
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 1A 2V
- Collector Emitter Breakdown Voltage :
- 450V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 250mA, 1A
- Number of Pins :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Length :
- 4.7mm
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-92
- Transistor Type :
- NPN
- Max Collector Current :
- 1.5A
- Collector Emitter Voltage (VCEO) :
- 400mV
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2017
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Width :
- 3.7mm
- Datasheets
- APT13003DZTR-G1
NPN -65°C~150°C TJ TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
APT13003DZTR-G1 Overview
In this device, the DC current gain is 5 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 250mA, 1A.With the emitter base voltage set at 9V, an efficient operation can be achieved.Input voltage breakdown is available at 450V volts.Product comes in the supplier's device package TO-92.There is a 450V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
APT13003DZTR-G1 Features
the DC current gain for this device is 5 @ 1A 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 250mA, 1A
the emitter base voltage is kept at 9V
the supplier device package of TO-92
APT13003DZTR-G1 Applications
There are a lot of Diodes Incorporated
APT13003DZTR-G1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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