APT13003DI-G1

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Min Operating Temperature :

-65°C

Collector Emitter Breakdown Voltage :

450V

Operating Temperature :

-65°C~150°C TJ

Frequency - Transition :

4MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

5 @ 1A 2V

Max Operating Temperature :

150°C

Current - Collector (Ic) (Max) :

1.5A

Supplier Device Package :

TO-251

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

400mV @ 250mA, 1A

Max Power Dissipation :

24W

Factory Lead Time :

15 Weeks

Max Collector Current :

1.5A

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Packaging :

Tube

Voltage - Collector Emitter Breakdown (Max) :

450V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

300mV

Polarity :

NPN

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Gain Bandwidth Product :

4MHz

Emitter Base Voltage (VEBO) :

9V

Collector Emitter Voltage (VCEO) :

400mV

Power - Max :

24W

Published :

2010

Mounting Type :

Through Hole

Continuous Collector Current :

1.5A

Element Configuration :

Single