APT13003DI-G1

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity :

NPN

Collector Emitter Voltage (VCEO) :

400mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

5 @ 1A 2V

Published :

2010

Factory Lead Time :

15 Weeks

Mounting Type :

Through Hole

Frequency - Transition :

4MHz

Power - Max :

24W

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Vce Saturation (Max) @ Ib, Ic :

400mV @ 250mA, 1A

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector (Ic) (Max) :

1.5A

Operating Temperature :

-65°C~150°C TJ

Packaging :

Tube

Continuous Collector Current :

1.5A

Supplier Device Package :

TO-251

Max Operating Temperature :

150°C

Min Operating Temperature :

-65°C

Collector Emitter Breakdown Voltage :

450V

Transistor Type :

NPN

Collector Emitter Saturation Voltage :

300mV

Mount :

Through Hole

Emitter Base Voltage (VEBO) :

9V

Voltage - Collector Emitter Breakdown (Max) :

450V

Max Collector Current :

1.5A

Gain Bandwidth Product :

4MHz

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

24W