APT11GP60BDQBG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Pbfree Code :

yes

Terminal Position :

Single

Voltage - Collector Emitter Breakdown (Max) :

600V

Qualification Status :

Not Qualified

Package / Case :

TO-247-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e1

Transistor Application :

POWER CONTROL

Mounting Type :

Through Hole

Gate Charge :

40nC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Number of Elements :

1

Turn Off Time-Nom (toff) :

150 ns

Switching Energy :

46μJ (on), 90μJ (off)

Terminal Finish :

TIN SILVER COPPER

Input Type :

Standard

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

Voltage - Rated DC :

600V

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

IGBT Type :

PT

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Published :

2012

Turn On Time :

16 ns

Td (on/off) @ 25°C :

7ns/29ns

Number of Terminations :

3

Power - Max :

187W

Lead Free :

Lead Free

Series :

POWER MOS 7®

RoHS Status :

RoHS Compliant

Packaging :

Tube

Current Rating :

41A

JEDEC-95 Code :

TO-247AD

Current - Collector Pulsed (Icm) :

45A

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 11A

Test Condition :

400V, 11A, 5 Ω, 15V