2SK3065T100

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

Unknown

Terminal Form :

Flat

Continuous Drain Current (ID) :

2A

Published :

2000

Power Dissipation :

500mW

Lead Free :

Lead Free

Rise Time :

50ns

Nominal Vgs :

800 mV

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

ECCN Code :

EAR99

Factory Lead Time :

8 Weeks

Drain to Source Breakdown Voltage :

60V

Power Dissipation-Max :

500mW Ta

Mounting Type :

Surface Mount

Turn-Off Delay Time :

120 ns

Turn On Delay Time :

20 ns

Rds On (Max) @ Id, Vgs :

320m Ω @ 1A, 4V

Resistance :

450mOhm

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Operating Temperature :

150°C TJ

Current Rating :

2A

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 10V

Number of Terminations :

3

Transistor Element Material :

SILICON

Fall Time (Typ) :

70 ns

Package / Case :

TO-243AA

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

800mV

Pin Count :

3

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Drain Current-Max (Abs) (ID) :

2A

Number of Pins :

3

Voltage - Rated DC :

60V

Time@Peak Reflow Temperature-Max (s) :

10

FET Type :

N-Channel

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4V

Number of Elements :

1

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260