2SK3018T106
- Mfr.Part #
- 2SK3018T106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 100MA UMT3
- Stock
- 300,000
- In Stock :
- 300,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 80 ns
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 100mA Ta
- Contact Plating :
- Copper, Silver, Tin
- Voltage - Rated DC :
- 30V
- Package / Case :
- SC-70, SOT-323
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 18 Weeks
- Radiation Hardening :
- No
- Height :
- 800μm
- Number of Pins :
- 3
- Threshold Voltage :
- 1.5V
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 0.1A
- Continuous Drain Current (ID) :
- 100mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Dual Supply Voltage :
- 30V
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 13pF @ 5V
- Vgs(th) (Max) @ Id :
- 1.5V @ 100μA
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 15 ns
- Power Dissipation :
- 200mW
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 200mW Ta
- Rds On (Max) @ Id, Vgs :
- 8 Ω @ 10mA, 4V
- FET Type :
- N-Channel
- Termination :
- SMD/SMT
- Rise Time :
- 35ns
- Nominal Vgs :
- 1.5 V
- Resistance :
- 13Ohm
- Drain to Source Breakdown Voltage :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 2mm
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Published :
- 2006
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 35 ns
- Current Rating :
- 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.25mm
- Datasheets
- 2SK3018T106

N-Channel Tape & Reel (TR) 8 Ω @ 10mA, 4V ±20V 13pF @ 5V SC-70, SOT-323
2SK3018T106 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 13pF @ 5V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.1A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1.5V, which means that it will not activate any of its functions when its threshold voltage reaches 1.5V.Using drive voltage (2.5V 4V), this device contributes to a reduction in overall power consumption.
2SK3018T106 Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 80 ns
a threshold voltage of 1.5V
2SK3018T106 Applications
There are a lot of ROHM Semiconductor
2SK3018T106 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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