2SC5876T106Q
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- Mfr.Part #
- 2SC5876T106Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A UMT3
- Stock
- 1,942
- In Stock ：
- 1,942
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 500mA
- Max Power Dissipation :
- 200mW
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 60V
- JESD-609 Code :
- e1
- Max Breakdown Voltage :
- 60V
- Number of Terminations :
- 3
- Turn Off Time-Max (toff) :
- 210ns
- Transistor Type :
- NPN
- Turn On Time-Max (ton) :
- 70ns
- Max Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- 150mV
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SC-70, SOT-323
- Contact Plating :
- Copper, Silver, Tin
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Factory Lead Time :
- 10 Weeks
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 300MHz
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 2V
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- Base Part Number :
- 2SC5876
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transition Frequency :
- 300MHz
- Terminal Position :
- Dual
- Number of Elements :
- 1
- hFE Min :
- 120
- Collector Emitter Breakdown Voltage :
- 60V
- Current Rating :
- 500mA
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 60V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- 2SC5876T106Q
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SC5876T106Q Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 50mA 2V.The collector emitter saturation voltage is 150mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 500mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 300MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
2SC5876T106Q Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 300MHz
2SC5876T106Q Applications
There are a lot of ROHM Semiconductor
2SC5876T106Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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