2SC5866TLR
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- Mfr.Part #
- 2SC5866TLR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A TSMT3
- Stock
- 14,549
- In Stock ：
- 14,549
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 200mV
- Number of Terminations :
- 3
- hFE Min :
- 120
- Radiation Hardening :
- No
- Contact Plating :
- Copper, Silver, Tin
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 2V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 200MHz
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Transition Frequency :
- 200MHz
- Number of Elements :
- 1
- Factory Lead Time :
- 20 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Continuous Collector Current :
- 2A
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 60V
- Pbfree Code :
- yes
- Published :
- 2011
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SC-96
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 2A
- Max Power Dissipation :
- 500mW
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Base Part Number :
- 2SC5866
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- JESD-609 Code :
- e1
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Current Rating :
- 2A
- Datasheets
- 2SC5866TLR
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN SC-96 Tape & Reel (TR) Surface Mount
2SC5866TLR Overview
In this device, the DC current gain is 120 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SC5866TLR Features
the DC current gain for this device is 120 @ 100mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 200MHz
2SC5866TLR Applications
There are a lot of ROHM Semiconductor
2SC5866TLR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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