2SC5866TLQ
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- Mfr.Part #
- 2SC5866TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A TSMT3
- Stock
- 15,815
- In Stock ：
- 15,815
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Copper, Silver, Tin
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Max Power Dissipation :
- 500mW
- Current Rating :
- 2A
- Power Dissipation :
- 500mW
- Package / Case :
- SC-96
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Voltage - Rated DC :
- 60V
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 2V
- Base Part Number :
- 2SC5866
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- Frequency :
- 200MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 200MHz
- Number of Pins :
- 3
- Transition Frequency :
- 200MHz
- Collector Emitter Breakdown Voltage :
- 60V
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 200mV
- Collector Base Voltage (VCBO) :
- 60V
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 2A
- Pin Count :
- 3
- JESD-609 Code :
- e1
- Termination :
- SMD/SMT
- Published :
- 2004
- Max Breakdown Voltage :
- 60V
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 120
- Factory Lead Time :
- 20 Weeks
- Mount :
- Surface Mount
- Datasheets
- 2SC5866TLQ
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN SC-96 Tape & Reel (TR) Surface Mount
2SC5866TLQ Overview
In this device, the DC current gain is 120 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SC5866TLQ Features
the DC current gain for this device is 120 @ 100mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 200MHz
2SC5866TLQ Applications
There are a lot of ROHM Semiconductor
2SC5866TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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