2SC5824T100Q
- Mfr.Part #
- 2SC5824T100Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A MPT3
- Stock
- 11,623
- In Stock :
- 11,623
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 3A
- Transistor Type :
- NPN
- Published :
- 2013
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Flat
- Transition Frequency :
- 200MHz
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 60V
- Package / Case :
- TO-243AA
- Max Frequency :
- 10MHz
- Collector Base Voltage (VCBO) :
- 60V
- Continuous Collector Current :
- 3A
- Height :
- 1.4mm
- Gain Bandwidth Product :
- 200MHz
- Max Collector Current :
- 3A
- Number of Pins :
- 4
- Emitter Base Voltage (VEBO) :
- 6V
- Case Connection :
- COLLECTOR
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Width :
- 2.7mm
- Collector Emitter Breakdown Voltage :
- 60V
- Length :
- 4.7mm
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- hFE Min :
- 120
- Base Part Number :
- 2SC5824
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Max Breakdown Voltage :
- 60V
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSSO-F3
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- JESD-609 Code :
- e2
- Max Power Dissipation :
- 2W
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Factory Lead Time :
- 13 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Element Configuration :
- Single
- Contact Plating :
- Copper, Tin
- Collector Emitter Saturation Voltage :
- 500V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 2V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2SC5824T100Q

NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC5824T100Q Overview
This device has a DC current gain of 120 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500V.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 3A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 200MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 3A volts is possible.
2SC5824T100Q Features
the DC current gain for this device is 120 @ 100mA 2V
a collector emitter saturation voltage of 500V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 200MHz
2SC5824T100Q Applications
There are a lot of ROHM Semiconductor
2SC5824T100Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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