2SC5658T2LQ
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- Mfr.Part #
- 2SC5658T2LQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A VMT3
- Stock
- 17,715
- In Stock ：
- 17,715
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e2
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Element Configuration :
- Single
- Contact Plating :
- Copper, Tin
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Width :
- 800μm
- Terminal Form :
- Flat
- HTS Code :
- 8541.21.00.75
- Base Part Number :
- 2SC5658
- Emitter Base Voltage (VEBO) :
- 7V
- Power Dissipation :
- 150mW
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 180MHz
- Collector Emitter Saturation Voltage :
- 400mV
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 13 Weeks
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 50V
- Current Rating :
- 150mA
- Package / Case :
- SOT-723
- Length :
- 1.2mm
- Mounting Type :
- Surface Mount
- Height :
- 500μm
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Terminations :
- 3
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- 150mA
- Transition Frequency :
- 180MHz
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 50V
- Terminal Position :
- Dual
- Max Frequency :
- 180MHz
- Collector Base Voltage (VCBO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 150mA
- Published :
- 2011
- Mount :
- Surface Mount
- Max Power Dissipation :
- 150mW
- hFE Min :
- 120
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 50V
- Datasheets
- 2SC5658T2LQ
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
2SC5658T2LQ Overview
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at 150mA to achieve high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 150mA current rating.As a result, the part has a transition frequency of 180MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 150mA volts.
2SC5658T2LQ Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2SC5658T2LQ Applications
There are a lot of ROHM Semiconductor
2SC5658T2LQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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