2SC5658T2LQ
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- Mfr.Part #
- 2SC5658T2LQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A VMT3
- Stock
- 17,715
- In Stock ：
- 17,715
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Length :
- 1.2mm
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Copper, Tin
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 180MHz
- Max Collector Current :
- 150mA
- Collector Emitter Voltage (VCEO) :
- 50V
- ECCN Code :
- EAR99
- Height :
- 500μm
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- Max Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Current Rating :
- 150mA
- HTS Code :
- 8541.21.00.75
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Terminal Form :
- Flat
- Published :
- 2011
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Factory Lead Time :
- 13 Weeks
- Element Configuration :
- Single
- Package / Case :
- SOT-723
- Power Dissipation :
- 150mW
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 150mW
- Continuous Collector Current :
- 150mA
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- REACH SVHC :
- No SVHC
- Width :
- 800μm
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- 2SC5658
- Radiation Hardening :
- No
- Transition Frequency :
- 180MHz
- Collector Emitter Saturation Voltage :
- 400mV
- Voltage - Rated DC :
- 50V
- hFE Min :
- 120
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Max Frequency :
- 180MHz
- JESD-609 Code :
- e2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Datasheets
- 2SC5658T2LQ
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
2SC5658T2LQ Overview
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at 150mA to achieve high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 150mA current rating.As a result, the part has a transition frequency of 180MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 150mA volts.
2SC5658T2LQ Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2SC5658T2LQ Applications
There are a lot of ROHM Semiconductor
2SC5658T2LQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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