2SC4132T100P
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- Mfr.Part #
- 2SC4132T100P
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 120V 2A MPT3
- Stock
- 4,434
- In Stock ：
- 4,434
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2004
- JESD-30 Code :
- R-PSSO-F3
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- HTS Code :
- 8541.21.00.95
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 120V
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e2
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 120V
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Current Rating :
- 1.5A
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 100mA, 1A
- Max Power Dissipation :
- 2W
- Max Collector Current :
- 2A
- Terminal Form :
- Flat
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Reach Compliance Code :
- not_compliant
- VCEsat-Max :
- 0.4 V
- Continuous Collector Current :
- 2A
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 80MHz
- hFE Min :
- 82
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 100mA 5V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 2V
- Base Part Number :
- 2SC4132
- Collector Emitter Breakdown Voltage :
- 120V
- Element Configuration :
- Single
- Voltage - Rated DC :
- 120V
- Transition Frequency :
- 80MHz
- Number of Elements :
- 1
- Contact Plating :
- Copper, Tin
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-243AA
- Datasheets
- 2SC4132T100P
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC4132T100P Overview
In this device, the DC current gain is 82 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 100mA, 1A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 80MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SC4132T100P Features
the DC current gain for this device is 82 @ 100mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 80MHz
2SC4132T100P Applications
There are a lot of ROHM Semiconductor
2SC4132T100P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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