2SC4102T106R
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- Mfr.Part #
- 2SC4102T106R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 120V 0.05A UMT3
- Stock
- 3,919
- In Stock ：
- 3,919
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 120V
- Terminal Position :
- Dual
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Gain Bandwidth Product :
- 140MHz
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 900μm
- Package / Case :
- SC-70, SOT-323
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- 2SC4102
- JESD-609 Code :
- e1
- HTS Code :
- 8541.21.00.75
- Length :
- 2.1mm
- Voltage - Rated DC :
- 25V
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- hFE Min :
- 180
- Current Rating :
- 50mA
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 50mA
- Collector Emitter Voltage (VCEO) :
- 120V
- Published :
- 2011
- Contact Plating :
- Copper, Silver, Tin
- Transition Frequency :
- 140MHz
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Factory Lead Time :
- 10 Weeks
- Collector Emitter Breakdown Voltage :
- 120V
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Continuous Collector Current :
- 50mA
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 500mV
- Max Power Dissipation :
- 200mW
- Max Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 6V
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 120V
- Width :
- 1.35mm
- Datasheets
- 2SC4102T106R
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SC4102T106R Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 2mA 6V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 50mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 50mA.In the part, the transition frequency is 140MHz.This device can take an input voltage of 120V volts before it breaks down.A maximum collector current of 50mA volts can be achieved.
2SC4102T106R Features
the DC current gain for this device is 180 @ 2mA 6V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 140MHz
2SC4102T106R Applications
There are a lot of ROHM Semiconductor
2SC4102T106R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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