2SC4082T106P
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- Mfr.Part #
- 2SC4082T106P
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.05A UMT3
- Stock
- 2,900
- In Stock ：
- 2,900
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Base Part Number :
- 2SC4082
- Length :
- 2mm
- Max Frequency :
- 1.5GHz
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 20mA
- Package / Case :
- SC-70, SOT-323
- Factory Lead Time :
- 13 Weeks
- Gain Bandwidth Product :
- 1.5 GHz
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Highest Frequency Band :
- VERY HIGH FREQUENCY B
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Continuous Collector Current :
- 50mA
- Transition Frequency :
- 1500MHz
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 10mA 10V
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Max Collector Current :
- 50mA
- Emitter Base Voltage (VEBO) :
- 3V
- Contact Plating :
- Copper, Silver, Tin
- JESD-609 Code :
- e1
- hFE Min :
- 56
- Collector-Base Capacitance-Max :
- 1.5pF
- Collector Emitter Breakdown Voltage :
- 20V
- Element Configuration :
- Single
- Height :
- 800μm
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Published :
- 2007
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 200mW
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector Base Voltage (VCBO) :
- 30V
- Current Rating :
- 50mA
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 18V
- Transistor Element Material :
- SILICON
- Width :
- 1.25mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 500mV
- Terminal Position :
- Dual
- HTS Code :
- 8541.21.00.75
- Max Breakdown Voltage :
- 20V
- Max Power Dissipation :
- 200mW
- Collector Emitter Voltage (VCEO) :
- 20V
- Datasheets
- 2SC4082T106P
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SC4082T106P Overview
In this device, the DC current gain is 82 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 4mA, 20mA.Maintaining the continuous collector voltage at 50mA is essential for high efficiency.Keeping the emitter base voltage at 3V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (50mA).1500MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 50mA volts.
2SC4082T106P Features
the DC current gain for this device is 82 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 4mA, 20mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 1500MHz
2SC4082T106P Applications
There are a lot of ROHM Semiconductor
2SC4082T106P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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