2SB1708TL
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- Mfr.Part #
- 2SB1708TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS PNP 30V 3A TSMT3
- Stock
- 5,920
- In Stock ：
- 5,920
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 30mA, 1.5A
- Factory Lead Time :
- 20 Weeks
- Collector Emitter Breakdown Voltage :
- 30V
- Contact Plating :
- Copper, Silver, Tin
- Lead Free :
- Lead Free
- HTS Code :
- 8541.21.00.75
- Radiation Hardening :
- No
- Package / Case :
- SC-96
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- -6V
- Continuous Collector Current :
- -3A
- Width :
- 1.6mm
- Terminal Position :
- Dual
- Pin Count :
- 3
- Mount :
- Surface Mount
- Current Rating :
- -3A
- Base Part Number :
- 2SB1708
- Polarity/Channel Type :
- PNP
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 270
- Length :
- 2.9mm
- JESD-609 Code :
- e1
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 200MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Voltage - Rated DC :
- -30V
- Gain Bandwidth Product :
- 200MHz
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Height :
- 900μm
- Max Power Dissipation :
- 500mW
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 3A
- Published :
- 2005
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- -30V
- Collector Emitter Saturation Voltage :
- -180mV
- Max Frequency :
- 100MHz
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 30V
- Datasheets
- 2SB1708TL
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-96 Tape & Reel (TR) Surface Mount
2SB1708TL Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -180mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 30mA, 1.5A.A -3A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
2SB1708TL Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at -6V
the current rating of this device is -3A
a transition frequency of 200MHz
2SB1708TL Applications
There are a lot of ROHM Semiconductor
2SB1708TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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