2SB1705TL
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- Mfr.Part #
- 2SB1705TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS PNP 12V 3A TSMT3
- Stock
- 6,924
- In Stock ：
- 6,924
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Max Collector Current :
- 3A
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Voltage - Rated DC :
- -12V
- Number of Terminations :
- 3
- Base Part Number :
- 2SB1705
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 12V
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 500mW
- Number of Pins :
- 3
- hFE Min :
- 270
- JESD-609 Code :
- e1
- Current Rating :
- -3A
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 280MHz
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- -120mV
- Collector Base Voltage (VCBO) :
- -15V
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Transition Frequency :
- 280MHz
- Factory Lead Time :
- 20 Weeks
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- -6V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 12V
- Contact Plating :
- Copper, Silver, Tin
- Package / Case :
- SC-96
- Pin Count :
- 3
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 500mW
- Collector Emitter Voltage (VCEO) :
- 250mV
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 30mA, 1.5A
- Transistor Type :
- PNP
- Continuous Collector Current :
- -3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 500mA 2V
- Published :
- 2005
- Element Configuration :
- Single
- Datasheets
- 2SB1705TL
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-96 Tape & Reel (TR) Surface Mount
2SB1705TL Overview
This device has a DC current gain of 270 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -120mV.A VCE saturation (Max) of 250mV @ 30mA, 1.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -3A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.This device has a current rating of -3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 280MHz.A breakdown input voltage of 12V volts can be used.A maximum collector current of 3A volts is possible.
2SB1705TL Features
the DC current gain for this device is 270 @ 500mA 2V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at -6V
the current rating of this device is -3A
a transition frequency of 280MHz
2SB1705TL Applications
There are a lot of ROHM Semiconductor
2SB1705TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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