2SB1689T106
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- Mfr.Part #
- 2SB1689T106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 12V 1.5A UMT3
- Stock
- 5,324
- In Stock ：
- 5,324
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Factory Lead Time :
- 13 Weeks
- Voltage - Rated DC :
- -12V
- Length :
- 2.1mm
- Max Collector Current :
- 1.5A
- Pbfree Code :
- yes
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- -110mV
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 12V
- Width :
- 1.35mm
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Copper, Silver, Tin
- Collector Emitter Breakdown Voltage :
- 12V
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Terminal Finish :
- TIN SILVER COPPER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Emitter Base Voltage (VEBO) :
- -5V
- Max Frequency :
- 100MHz
- Max Power Dissipation :
- 200mW
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 12V
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- -15V
- Mount :
- Surface Mount
- Current Rating :
- -1.5A
- Package / Case :
- SC-70, SOT-323
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- hFE Min :
- 270
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 25mA, 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Published :
- 2004
- Gain Bandwidth Product :
- 400MHz
- Transition Frequency :
- 400MHz
- Continuous Collector Current :
- -1.5A
- Radiation Hardening :
- No
- Height :
- 900μm
- Base Part Number :
- 2SB1689
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Datasheets
- 2SB1689T106
2SB1689T106 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SB1689T106 Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -110mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 25mA, 500mA.Maintaining the continuous collector voltage at -1.5A is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1.5A).400MHz is present in the transition frequency.An input voltage of 12V volts is the breakdown voltage.Maximum collector currents can be below 1.5A volts.
2SB1689T106 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -110mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 400MHz
2SB1689T106 Applications
There are a lot of ROHM Semiconductor
2SB1689T106 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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