2SB1689T106
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- Mfr.Part #
- 2SB1689T106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 12V 1.5A UMT3
- Stock
- 5,324
- In Stock ：
- 5,324
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 400MHz
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 25mA, 500mA
- Max Breakdown Voltage :
- 12V
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- -5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Length :
- 2.1mm
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Max Frequency :
- 100MHz
- Transistor Type :
- PNP
- Pin Count :
- 3
- Number of Terminations :
- 3
- Contact Plating :
- Copper, Silver, Tin
- Collector Emitter Saturation Voltage :
- -110mV
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 12V
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- -15V
- Operating Temperature :
- 150°C TJ
- Width :
- 1.35mm
- Package / Case :
- SC-70, SOT-323
- Current Rating :
- -1.5A
- Published :
- 2004
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 12V
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 200mW
- Factory Lead Time :
- 13 Weeks
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- hFE Min :
- 270
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 900μm
- Base Part Number :
- 2SB1689
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 1.5A
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 400MHz
- Voltage - Rated DC :
- -12V
- JESD-609 Code :
- e1
- Terminal Finish :
- TIN SILVER COPPER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- -1.5A
- Datasheets
- 2SB1689T106
2SB1689T106 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SB1689T106 Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -110mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 25mA, 500mA.Maintaining the continuous collector voltage at -1.5A is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1.5A).400MHz is present in the transition frequency.An input voltage of 12V volts is the breakdown voltage.Maximum collector currents can be below 1.5A volts.
2SB1689T106 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -110mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 400MHz
2SB1689T106 Applications
There are a lot of ROHM Semiconductor
2SB1689T106 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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