2SB1689T106
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- Mfr.Part #
- 2SB1689T106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 12V 1.5A UMT3
- Stock
- 5,324
- In Stock ：
- 5,324
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Form :
- Gull wing
- Continuous Collector Current :
- -1.5A
- Transistor Type :
- PNP
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Height :
- 900μm
- Lead Free :
- Lead Free
- Length :
- 2.1mm
- Current Rating :
- -1.5A
- Transition Frequency :
- 400MHz
- Max Power Dissipation :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 25mA, 500mA
- Contact Plating :
- Copper, Silver, Tin
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 270
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Element Configuration :
- Single
- Number of Elements :
- 1
- Published :
- 2004
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- TIN SILVER COPPER
- Emitter Base Voltage (VEBO) :
- -5V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 12V
- Collector Emitter Breakdown Voltage :
- 12V
- Gain Bandwidth Product :
- 400MHz
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 1.5A
- Width :
- 1.35mm
- Max Frequency :
- 100MHz
- Voltage - Rated DC :
- -12V
- Package / Case :
- SC-70, SOT-323
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Base Part Number :
- 2SB1689
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Pin Count :
- 3
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- -110mV
- Collector Base Voltage (VCBO) :
- -15V
- Max Breakdown Voltage :
- 12V
- Factory Lead Time :
- 13 Weeks
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2SB1689T106
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SB1689T106 Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -110mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 25mA, 500mA.Maintaining the continuous collector voltage at -1.5A is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1.5A).400MHz is present in the transition frequency.An input voltage of 12V volts is the breakdown voltage.Maximum collector currents can be below 1.5A volts.
2SB1689T106 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -110mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 400MHz
2SB1689T106 Applications
There are a lot of ROHM Semiconductor
2SB1689T106 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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