2SB1326TV2Q
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- Mfr.Part #
- 2SB1326TV2Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS PNP 20V 5A ATV
- Stock
- 25,514
- In Stock ：
- 25,514
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1W
- Element Configuration :
- Single
- Packaging :
- Tape and Box (TB)
- Current - Collector (Ic) (Max) :
- 5A
- Mount :
- Through Hole
- hFE Min :
- 120
- Collector Base Voltage (VCBO) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Terminal Finish :
- TIN SILVER COPPER
- Emitter Base Voltage (VEBO) :
- 6V
- Voltage - Collector Emitter Breakdown (Max) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 4A
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Current Rating :
- -5A
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSIP-T3
- JESD-609 Code :
- e1
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Transition Frequency :
- 120MHz
- Collector Emitter Voltage (VCEO) :
- 400mV
- Published :
- 2004
- Max Collector Current :
- 700mA
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Package / Case :
- 3-SIP
- Polarity/Channel Type :
- PNP
- Base Part Number :
- 2SB1326
- Gain Bandwidth Product :
- 120MHz
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 2V
- Voltage - Rated DC :
- -20V
- Max Breakdown Voltage :
- 20V
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Lead Free :
- Lead Free
- Datasheets
- 2SB1326TV2Q
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP 3-SIP Tape & Box (TB) Through Hole
2SB1326TV2Q Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 500mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 120MHz in the part.Single BJT transistor can be broken down at a voltage of 20V volts.Single BJT transistor shows a 20V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 700mA volts.
2SB1326TV2Q Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is -5A
a transition frequency of 120MHz
2SB1326TV2Q Applications
There are a lot of ROHM Semiconductor
2SB1326TV2Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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