2SB1308T100P
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- Mfr.Part #
- 2SB1308T100P
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 3A MPT3
- Stock
- 12,880
- In Stock ：
- 12,880
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- -50V
- Terminal Form :
- Flat
- Max Collector Current :
- 3A
- Operating Temperature :
- 150°C TJ
- Published :
- 1998
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- TIN COPPER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 500mA 2V
- Current Rating :
- -3A
- Base Part Number :
- 2SB1308
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 450mV
- Max Power Dissipation :
- 2W
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 150mA, 1.5A
- Number of Elements :
- 1
- JESD-609 Code :
- e2
- JESD-30 Code :
- R-PSSO-F3
- hFE Min :
- 82
- Qualification Status :
- Not Qualified
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-243AA
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Gain Bandwidth Product :
- 120MHz
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector (Ic) (Max) :
- 3A
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Emitter Breakdown Voltage :
- 20V
- Voltage - Rated DC :
- -20V
- Mount :
- Surface Mount
- Datasheets
- 2SB1308T100P
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1308T100P Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 82 @ 500mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 450mV @ 150mA, 1.5A.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is -3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2SB1308T100P Features
the DC current gain for this device is 82 @ 500mA 2V
the vce saturation(Max) is 450mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V
the current rating of this device is -3A
2SB1308T100P Applications
There are a lot of ROHM Semiconductor
2SB1308T100P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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