2SB1260T100R
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- Mfr.Part #
- 2SB1260T100R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A MPT3
- Stock
- 12,236
- In Stock ：
- 12,236
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Contact Plating :
- Copper, Tin
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 82
- Collector Emitter Breakdown Voltage :
- 80V
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Terminal Form :
- Flat
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Current Rating :
- -1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 3V
- Voltage - Rated DC :
- -80V
- Collector Base Voltage (VCBO) :
- 80V
- Frequency :
- 100MHz
- Terminal Finish :
- TIN COPPER
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PSSO-F3
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 80V
- Continuous Collector Current :
- -1A
- Mounting Type :
- Surface Mount
- Published :
- 1999
- Package / Case :
- TO-243AA
- Number of Pins :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- -5V
- Mount :
- Surface Mount
- Max Power Dissipation :
- 2W
- Pin Count :
- 3
- Max Collector Current :
- 1A
- JESD-609 Code :
- e2
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 100MHz
- Power Dissipation :
- 2W
- Lead Free :
- Lead Free
- Factory Lead Time :
- 10 Weeks
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Base Part Number :
- 2SB1260
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Datasheets
- 2SB1260T100R
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1260T100R Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 100mA 3V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 1A volts at its maximum.
2SB1260T100R Features
the DC current gain for this device is 180 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
2SB1260T100R Applications
There are a lot of ROHM Semiconductor
2SB1260T100R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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