2SB1240TV2Q
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- Mfr.Part #
- 2SB1240TV2Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS PNP 32V 2A ATV
- Stock
- 12,683
- In Stock ：
- 12,683
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- -2A
- Voltage - Rated DC :
- -32V
- Pbfree Code :
- yes
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- -5V
- JESD-609 Code :
- e1
- Mounting Type :
- Through Hole
- Transition Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 800mV
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2004
- hFE Min :
- 120
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSIP-T3
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 1W
- Terminal Finish :
- TIN SILVER COPPER
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- -40V
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 2A
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 100MHz
- Current - Collector (Ic) (Max) :
- 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Box (TB)
- Pin Count :
- 3
- Number of Terminations :
- 3
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- Package / Case :
- 3-SIP
- Collector Emitter Breakdown Voltage :
- 32V
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- -500mV
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Qualification Status :
- Not Qualified
- Datasheets
- 2SB1240TV2Q
2SB1240TV2Q Documents
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP 3-SIP Tape & Box (TB) Through Hole
2SB1240TV2Q Overview
This device has a DC current gain of 120 @ 500mA 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 800mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 2A volts is possible.
2SB1240TV2Q Features
the DC current gain for this device is 120 @ 500mA 3V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 100MHz
2SB1240TV2Q Applications
There are a lot of ROHM Semiconductor
2SB1240TV2Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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