2SB1197KT146R
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- Mfr.Part #
- 2SB1197KT146R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SMD/SMT
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.8A SMT3
- Stock
- 55,184
- In Stock ：
- 55,184
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Max Operating Temperature :
- 150°C
- Collector Emitter Breakdown Voltage :
- 32V
- Lead Free :
- Lead Free
- Package / Case :
- SMD/SMT
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current Rating :
- -800mA
- Max Collector Current :
- 800mA
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- JESD-609 Code :
- e1
- Contact Plating :
- Copper, Silver, Tin
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- -800mA
- Terminal Form :
- Gull wing
- hFE Min :
- 120
- Collector Base Voltage (VCBO) :
- -40V
- ECCN Code :
- EAR99
- Min Operating Temperature :
- -55°C
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Max Power Dissipation :
- 200mW
- Polarity :
- PNP
- Transition Frequency :
- 200MHz
- Transistor Application :
- AMPLIFIER
- VCEsat-Max :
- 0.5 V
- Factory Lead Time :
- 7 Weeks
- Mount :
- Surface Mount
- HTS Code :
- 8541.21.00.75
- Pin Count :
- 3
- Element Configuration :
- Single
- Voltage - Rated DC :
- -32V
- Collector Emitter Voltage (VCEO) :
- 500mV
- Emitter Base Voltage (VEBO) :
- -5V
- Published :
- 2004
- Pbfree Code :
- yes
- DC Current Gain-Min (hFE) :
- 180
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 200MHz
- Collector Emitter Saturation Voltage :
- -500mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 32V
- Datasheets
- 2SB1197KT146R
1 Elements 3 Terminations SMD/SMT Tape & Reel (TR)
2SB1197KT146R Overview
Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.Single BJT transistor is recommended to keep the continuous collector voltage at -800mA in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -800mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.The breakdown input voltage is 32V volts.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
2SB1197KT146R Features
a collector emitter saturation voltage of -500mV
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz
2SB1197KT146R Applications
There are a lot of ROHM Semiconductor
2SB1197KT146R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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