2SB1132T100R

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Mfr.Part #
2SB1132T100R
Manufacturer
ROHM Semiconductor
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 32V 1A MPT3
Stock
5,908
In Stock :
5,908

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Factory Lead Time :
7 Weeks
ECCN Code :
EAR99
Packaging :
Tape and Reel (TR)
Max Breakdown Voltage :
32V
Collector Base Voltage (VCBO) :
40V
Radiation Hardening :
No
Operating Temperature :
150°C TJ
Transistor Application :
AMPLIFIER
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
260
Mount :
Surface Mount
Max Collector Current :
1A
JESD-30 Code :
R-PSSO-F3
Power Dissipation :
2W
Element Configuration :
Single
Mounting Type :
Surface Mount
Transistor Type :
PNP
Current - Collector Cutoff (Max) :
500nA ICBO
Collector Emitter Voltage (VCEO) :
32V
Pin Count :
3
Published :
1997
Contact Plating :
Copper, Tin
RoHS Status :
ROHS3 Compliant
Terminal Form :
Flat
Collector Emitter Breakdown Voltage :
32V
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Terminal Finish :
TIN COPPER
Number of Pins :
4
Time@Peak Reflow Temperature-Max (s) :
10
DC Current Gain (hFE) (Min) @ Ic, Vce :
180 @ 100mA 3V
Transition Frequency :
150MHz
Current Rating :
-1A
Package / Case :
TO-243AA
JESD-609 Code :
e2
Max Power Dissipation :
2W
Pbfree Code :
yes
Voltage - Rated DC :
-32V
Base Part Number :
2SB1132
Case Connection :
COLLECTOR
Frequency :
150MHz
Polarity/Channel Type :
PNP
Collector-Base Capacitance-Max :
30pF
hFE Min :
82
VCEsat-Max :
0.5 V
Gain Bandwidth Product :
150MHz
Emitter Base Voltage (VEBO) :
-5V
Transistor Element Material :
SILICON
Continuous Collector Current :
-1A
Collector Emitter Saturation Voltage :
-200mV
Datasheets
2SB1132T100R
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SB1132T100R from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Surface Mount, Number of Pins:4, Package / Case:TO-243AA, Base Part Number:2SB1132, 2SB1132T100R pinout, 2SB1132T100R datasheet PDF, 2SB1132T100R amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SB1132T100R ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor 2SB1132T100R


PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

2SB1132T100R Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 100mA 3V DC current gain.As it features a collector emitter saturation voltage of -200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -1A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 32V volts.When collector current reaches its maximum, it can reach 1A volts.

2SB1132T100R Features


the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz


2SB1132T100R Applications


There are a lot of ROHM Semiconductor
2SB1132T100R applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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