2SB1132T100R
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- Mfr.Part #
- 2SB1132T100R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 32V 1A MPT3
- Stock
- 5,908
- In Stock ：
- 5,908
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- TIN COPPER
- JESD-30 Code :
- R-PSSO-F3
- Emitter Base Voltage (VEBO) :
- -5V
- Transition Frequency :
- 150MHz
- Power Dissipation :
- 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 3V
- Collector Emitter Breakdown Voltage :
- 32V
- Max Collector Current :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -200mV
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 4
- Max Power Dissipation :
- 2W
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 40V
- Max Breakdown Voltage :
- 32V
- Voltage - Rated DC :
- -32V
- Frequency :
- 150MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-243AA
- Published :
- 1997
- JESD-609 Code :
- e2
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Collector Emitter Voltage (VCEO) :
- 32V
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- 2SB1132
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- hFE Min :
- 82
- Continuous Collector Current :
- -1A
- VCEsat-Max :
- 0.5 V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 150MHz
- Terminal Form :
- Flat
- Factory Lead Time :
- 7 Weeks
- Contact Plating :
- Copper, Tin
- Collector-Base Capacitance-Max :
- 30pF
- Current Rating :
- -1A
- Polarity/Channel Type :
- PNP
- Datasheets
- 2SB1132T100R
2SB1132T100R Documents
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1132T100R Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 100mA 3V DC current gain.As it features a collector emitter saturation voltage of -200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -1A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 32V volts.When collector current reaches its maximum, it can reach 1A volts.
2SB1132T100R Features
the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
2SB1132T100R Applications
There are a lot of ROHM Semiconductor
2SB1132T100R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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