2SB1132T100R
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- Mfr.Part #
- 2SB1132T100R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 32V 1A MPT3
- Stock
- 5,908
- In Stock ：
- 5,908
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 150MHz
- Continuous Collector Current :
- -1A
- VCEsat-Max :
- 0.5 V
- Collector Emitter Breakdown Voltage :
- 32V
- Lead Free :
- Lead Free
- Max Collector Current :
- 1A
- JESD-609 Code :
- e2
- Factory Lead Time :
- 7 Weeks
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Power Dissipation :
- 2W
- Mount :
- Surface Mount
- Pin Count :
- 3
- Collector-Base Capacitance-Max :
- 30pF
- Collector Base Voltage (VCBO) :
- 40V
- hFE Min :
- 82
- Gain Bandwidth Product :
- 150MHz
- Number of Terminations :
- 3
- Frequency :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 3V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- -200mV
- Published :
- 1997
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -32V
- Element Configuration :
- Single
- Package / Case :
- TO-243AA
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 4
- Max Power Dissipation :
- 2W
- Transistor Element Material :
- SILICON
- Terminal Form :
- Flat
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Contact Plating :
- Copper, Tin
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Emitter Base Voltage (VEBO) :
- -5V
- Max Breakdown Voltage :
- 32V
- Collector Emitter Voltage (VCEO) :
- 32V
- Current Rating :
- -1A
- JESD-30 Code :
- R-PSSO-F3
- Terminal Finish :
- TIN COPPER
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- 2SB1132
- Datasheets
- 2SB1132T100R
2SB1132T100R Documents
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1132T100R Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 100mA 3V DC current gain.As it features a collector emitter saturation voltage of -200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -1A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 32V volts.When collector current reaches its maximum, it can reach 1A volts.
2SB1132T100R Features
the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
2SB1132T100R Applications
There are a lot of ROHM Semiconductor
2SB1132T100R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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