2SARA41CHZGT116R
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- Mfr.Part #
- 2SARA41CHZGT116R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.05A SST3
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 6V
- Voltage - Collector Emitter Breakdown (Max) :
- 120V
- Factory Lead Time :
- 13 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Series :
- Automotive, AEC-Q101
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Transistor Type :
- PNP
- Power - Max :
- 200mW
- Frequency - Transition :
- 140MHz
- Reach Compliance Code :
- not_compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Current - Collector (Ic) (Max) :
- 50mA
- Datasheets
- 2SARA41CHZGT116R
2SARA41CHZGT116R Documents
PNP 150°C TJ 500nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SARA41CHZGT116R Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 2mA 6V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1mA, 10mA.A 120V maximal voltage - Collector Emitter Breakdown is present in the device.
2SARA41CHZGT116R Features
the DC current gain for this device is 180 @ 2mA 6V
the vce saturation(Max) is 500mV @ 1mA, 10mA
2SARA41CHZGT116R Applications
There are a lot of ROHM Semiconductor
2SARA41CHZGT116R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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