2SAR554PT100
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- Mfr.Part #
- 2SAR554PT100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1.5A MPT3
- Stock
- 3,164
- In Stock ：
- 3,164
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 80V
- Transition Frequency :
- 340MHz
- Collector Emitter Voltage (VCEO) :
- 400mV
- Collector Emitter Saturation Voltage :
- -200mV
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Flat
- Qualification Status :
- Not Qualified
- Published :
- 2009
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Emitter Base Voltage (VEBO) :
- -6V
- Continuous Collector Current :
- -1.5A
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 2W
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 340MHz
- Max Collector Current :
- 1.5A
- JESD-30 Code :
- R-PSSO-F3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Element Configuration :
- Single
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Case Connection :
- COLLECTOR
- Current - Collector (Ic) (Max) :
- 1.5A
- Package / Case :
- TO-243AA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 25mA, 500mA
- Collector Base Voltage (VCBO) :
- -80V
- Number of Elements :
- 1
- JESD-609 Code :
- e2
- Datasheets
- 2SAR554PT100
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SAR554PT100 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 25mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at -1.5A in order to achieve high efficiency.The emitter base voltage can be kept at -6V for high efficiency.The part has a transition frequency of 340MHz.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
2SAR554PT100 Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 340MHz
2SAR554PT100 Applications
There are a lot of ROHM Semiconductor
2SAR554PT100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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