2SAR553P5T100
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- Mfr.Part #
- 2SAR553P5T100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A MPT3
- Stock
- 7,772
- In Stock ：
- 7,772
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 400mV
- Frequency - Transition :
- 320MHz
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 35mA, 700mA
- Packaging :
- Tape and Reel (TR)
- Published :
- 2017
- Package / Case :
- TO-243AA
- Power - Max :
- 500mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 13 Weeks
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Max Power Dissipation :
- 500mW
- Max Collector Current :
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 50mA 2V
- Collector Emitter Breakdown Voltage :
- 50V
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Reach Compliance Code :
- not_compliant
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2SAR553P5T100
PNP 150°C TJ 1μA ICBO TO-243AA Tape & Reel (TR) Surface Mount
2SAR553P5T100 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 50mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 35mA, 700mA.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.
2SAR553P5T100 Features
the DC current gain for this device is 180 @ 50mA 2V
the vce saturation(Max) is 400mV @ 35mA, 700mA
2SAR553P5T100 Applications
There are a lot of ROHM Semiconductor
2SAR553P5T100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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