2SAR523UBTL
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- Mfr.Part #
- 2SAR523UBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-85
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.1A UMT3F
- Stock
- 57,171
- In Stock ：
- 57,171
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e1
- Package / Case :
- SC-85
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Gain Bandwidth Product :
- 300MHz
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Type :
- PNP
- Factory Lead Time :
- 13 Weeks
- Polarity/Channel Type :
- PNP
- JESD-30 Code :
- R-PDSO-F3
- Collector Emitter Breakdown Voltage :
- 50V
- Element Configuration :
- Single
- Number of Elements :
- 1
- hFE Min :
- 120
- Terminal Form :
- Flat
- Terminal Position :
- Dual
- Pin Count :
- 3
- Transition Frequency :
- 300MHz
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 400mV
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Max Power Dissipation :
- 200mW
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- -50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Max Collector Current :
- 100mA
- Published :
- 2006
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- -100mA
- Number of Pins :
- 85
- Max Breakdown Voltage :
- 50V
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -150mV
- Power - Max :
- 200mW
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- -5V
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Datasheets
- 2SAR523UBTL
2SAR523UBTL Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-85 Tape & Reel (TR) Surface Mount
2SAR523UBTL Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -150mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -100mA is necessary for high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.In this part, there is a transition frequency of 300MHz.As a result, it can handle voltages as low as 50V volts.The maximum collector current is 100mA volts.
2SAR523UBTL Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
2SAR523UBTL Applications
There are a lot of ROHM Semiconductor
2SAR523UBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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