2SAR522MT2L
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- Mfr.Part #
- 2SAR522MT2L
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PNP 20V 0.2A VMT3
- Stock
- 6,364
- In Stock ：
- 6,364
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 200mA
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 2V
- Power - Max :
- 150mW
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Terminal Form :
- Flat
- Continuous Collector Current :
- -200mA
- Collector Base Voltage (VCBO) :
- -20V
- Package / Case :
- SOT-723
- Published :
- 2010
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 350MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- JESD-609 Code :
- e2
- Packaging :
- Cut Tape (CT)
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 300mV
- Collector Emitter Breakdown Voltage :
- 20V
- JESD-30 Code :
- R-PDSO-F3
- hFE Min :
- 120
- Transition Frequency :
- 350MHz
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 13 Weeks
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Saturation Voltage :
- -120mV
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 150mW
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 20V
- Datasheets
- 2SAR522MT2L
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-723 Cut Tape (CT) Surface Mount
2SAR522MT2L Overview
In this device, the DC current gain is 120 @ 1mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -120mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.A -200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 350MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
2SAR522MT2L Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 350MHz
2SAR522MT2L Applications
There are a lot of ROHM Semiconductor
2SAR522MT2L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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