2SAR522EBTL
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- Mfr.Part #
- 2SAR522EBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS PNP 20V 0.2A EMT3F
- Stock
- 9,000
- In Stock ：
- 9,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 300mV
- Terminal Form :
- Flat
- Published :
- 2015
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 13 Weeks
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Continuous Collector Current :
- -200mA
- Collector Emitter Breakdown Voltage :
- 20V
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 2V
- Transition Frequency :
- 350MHz
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Max Collector Current :
- 200mA
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- Gain Bandwidth Product :
- 350MHz
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 120
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Base Voltage (VCBO) :
- -20V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 20V
- Max Power Dissipation :
- 150mW
- Package / Case :
- SC-89, SOT-490
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Terminal Position :
- Dual
- Transistor Type :
- PNP
- Power - Max :
- 150mW
- JESD-30 Code :
- R-PDSO-F3
- Collector Emitter Saturation Voltage :
- -120mV
- Datasheets
- 2SAR522EBTL
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-89, SOT-490 Tape & Reel (TR) Surface Mount
2SAR522EBTL Overview
DC current gain in this device equals 120 @ 1mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -120mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 10mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at -200mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.As a result, the part has a transition frequency of 350MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 200mA volts.
2SAR522EBTL Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 350MHz
2SAR522EBTL Applications
There are a lot of ROHM Semiconductor
2SAR522EBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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