2SAR522EBTL
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- Mfr.Part #
- 2SAR522EBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS PNP 20V 0.2A EMT3F
- Stock
- 9,000
- In Stock ：
- 9,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 200mA
- Number of Elements :
- 1
- Pin Count :
- 3
- Transistor Type :
- PNP
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Factory Lead Time :
- 13 Weeks
- JESD-609 Code :
- e1
- Max Power Dissipation :
- 150mW
- Power - Max :
- 150mW
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Continuous Collector Current :
- -200mA
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 20V
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- -20V
- Gain Bandwidth Product :
- 350MHz
- Transition Frequency :
- 350MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 20V
- Package / Case :
- SC-89, SOT-490
- hFE Min :
- 120
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 300mV
- Collector Emitter Saturation Voltage :
- -120mV
- JESD-30 Code :
- R-PDSO-F3
- Mounting Type :
- Surface Mount
- Terminal Form :
- Flat
- Emitter Base Voltage (VEBO) :
- -5V
- Packaging :
- Tape and Reel (TR)
- Published :
- 2015
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- PNP
- Datasheets
- 2SAR522EBTL
2SAR522EBTL Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-89, SOT-490 Tape & Reel (TR) Surface Mount
2SAR522EBTL Overview
DC current gain in this device equals 120 @ 1mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -120mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 10mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at -200mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.As a result, the part has a transition frequency of 350MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 200mA volts.
2SAR522EBTL Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 350MHz
2SAR522EBTL Applications
There are a lot of ROHM Semiconductor
2SAR522EBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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