2SAR513PT100
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- Mfr.Part #
- 2SAR513PT100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 1A MPT3
- Stock
- 4,744
- In Stock ：
- 4,744
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- hFE Min :
- 180
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Max Collector Current :
- 1A
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 50V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 25mA, 500mA
- Power - Max :
- 2W
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- -6V
- Collector Emitter Voltage (VCEO) :
- 400mV
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Emitter Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- -50V
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 50mA 2V
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 400MHz
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- JESD-609 Code :
- e2
- Published :
- 2013
- Terminal Finish :
- TIN COPPER
- Max Power Dissipation :
- 2W
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -200mV
- Gain Bandwidth Product :
- 400MHz
- Package / Case :
- TO-243AA
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Datasheets
- 2SAR513PT100
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SAR513PT100 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 50mA 2V DC current gain.As it features a collector emitter saturation voltage of -200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -6V can result in a high level of efficiency.There is a transition frequency of 400MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 1A volts.
2SAR513PT100 Features
the DC current gain for this device is 180 @ 50mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 400MHz
2SAR513PT100 Applications
There are a lot of ROHM Semiconductor
2SAR513PT100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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