2SA2222SG
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- Mfr.Part #
- 2SA2222SG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 50V 10A TO220ML
- Stock
- 13
- In Stock ：
- 13
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Saturation Voltage :
- -250mV
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 25W
- Published :
- 2012
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Transition Frequency :
- 230MHz
- Frequency :
- 230MHz
- Collector Base Voltage (VCBO) :
- 50V
- Factory Lead Time :
- 27 Weeks
- Package / Case :
- TO-220-3 Full Pack
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Voltage (VCEO) :
- 50V
- Power Dissipation :
- 25W
- Transistor Type :
- PNP
- Case Connection :
- Isolated
- Continuous Collector Current :
- -10A
- Max Collector Current :
- 10A
- Operating Temperature :
- 150°C TJ
- Reach Compliance Code :
- not_compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- hFE Min :
- 150
- Gain Bandwidth Product :
- 230MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 270mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 300mA, 6A
- Datasheets
- 2SA2222SG
2SA2222SG Documents
PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole
2SA2222SG Overview
This device has a DC current gain of 150 @ 270mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 500mV @ 300mA, 6A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -10A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 230MHz.A maximum collector current of 10A volts is possible.
2SA2222SG Features
the DC current gain for this device is 150 @ 270mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 300mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 230MHz
2SA2222SG Applications
There are a lot of ON Semiconductor
2SA2222SG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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