2SA2210-1E
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- Mfr.Part #
- 2SA2210-1E
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 50V 20A TO220F-3SG
- Stock
- 67,923
- In Stock ：
- 67,923
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Transition Frequency :
- 140MHz
- Collector Emitter Voltage (VCEO) :
- 500mV
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- -6V
- Reach Compliance Code :
- not_compliant
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 50V
- hFE Min :
- 150
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Max Collector Current :
- 20A
- Terminal Finish :
- Tin (Sn)
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-220-3 Full Pack
- Transistor Application :
- SWITCHING
- Case Connection :
- Isolated
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- -200mV
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 140MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 1A 2V
- Collector Base Voltage (VCBO) :
- -50V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 350mA, 7A
- Current - Collector (Ic) (Max) :
- 20A
- Factory Lead Time :
- 2 Weeks
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Max Power Dissipation :
- 2W
- Published :
- 2013
- Datasheets
- 2SA2210-1E
PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole
2SA2210-1E Overview
In this device, the DC current gain is 150 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 350mA, 7A.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Single BJT transistor is possible for the collector current to fall as low as 20A volts at Single BJT transistors maximum.
2SA2210-1E Features
the DC current gain for this device is 150 @ 1A 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 350mA, 7A
the emitter base voltage is kept at -6V
a transition frequency of 140MHz
2SA2210-1E Applications
There are a lot of ON Semiconductor
2SA2210-1E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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