2SA2205-E
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- Mfr.Part #
- 2SA2205-E
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A TP
- Stock
- 8,000
- In Stock ：
- 8,000
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Operating Temperature :
- 150°C TJ
- Power - Max :
- 800mW
- Packaging :
- Bulk
- hFE Min :
- 200
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Pbfree Code :
- yes
- Frequency - Transition :
- 300MHz
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 100V
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- -240mV
- Factory Lead Time :
- 4 Weeks
- Published :
- 2012
- Number of Elements :
- 1
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 100V
- JESD-609 Code :
- e6
- Emitter Base Voltage (VEBO) :
- -7V
- Max Power Dissipation :
- 800mW
- Max Collector Current :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 240mV @ 100mA, 1A
- Transition Frequency :
- 300MHz
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Configuration :
- Single
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 5V
- Surface Mount :
- No
- Datasheets
- 2SA2205-E
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SA2205-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 5V.When VCE saturation is 240mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -7V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.A maximum collector current of 2A volts can be achieved.
2SA2205-E Features
the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 240mV @ 100mA, 1A
the emitter base voltage is kept at -7V
a transition frequency of 300MHz
2SA2205-E Applications
There are a lot of ON Semiconductor
2SA2205-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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