2SA2169-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e6

Collector Emitter Voltage (VCEO) :

-580mV

Frequency :

130MHz

Operating Temperature :

150°C TJ

Collector Emitter Breakdown Voltage :

50V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

10μA ICBO

Terminal Finish :

Tin/Bismuth (Sn/Bi)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A 2V

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

6V

Factory Lead Time :

2 Weeks

Packaging :

Bulk

Number of Pins :

3

Gain Bandwidth Product :

130MHz

Pin Count :

3

Max Power Dissipation :

950mW

Element Configuration :

Single

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Mounting Type :

Through Hole

Collector Base Voltage (VCBO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

200

Pbfree Code :

yes

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 week ago)

Reach Compliance Code :

not_compliant

Collector Emitter Saturation Voltage :

-290mV

Vce Saturation (Max) @ Ib, Ic :

580mV @ 250mA, 5A

Max Collector Current :

10A

Published :

1999

Transistor Type :

PNP

Number of Elements :

1

Power Dissipation :

950mW