2SA2154CT-GR,L3F

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Mfr.Part #
2SA2154CT-GR,L3F
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
SC-101, SOT-883
Datasheet
Download
Description
TRANS PNP 50V 0.1A CST3
Stock
11,654
In Stock :
11,654

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
RoHS Compliant
Max Collector Current :
100mA
Collector Emitter Breakdown Voltage :
50V
Collector Base Voltage (VCBO) :
50V
Factory Lead Time :
12 Weeks
Emitter Base Voltage (VEBO) :
5V
Published :
2003
Operating Temperature :
150°C TJ
Transistor Type :
PNP
Mount :
Surface Mount
Number of Pins :
3
Power - Max :
100mW
Current - Collector Cutoff (Max) :
100nA ICBO
Reach Compliance Code :
Unknown
Mounting Type :
Surface Mount
Vce Saturation (Max) @ Ib, Ic :
300mV @ 10mA, 100mA
Frequency - Transition :
80MHz
Max Breakdown Voltage :
50V
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA 6V
Packaging :
Cut Tape (CT)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
300mV
Package / Case :
SC-101, SOT-883
Max Power Dissipation :
100mW
Datasheets
2SA2154CT-GR,L3F
Introducing Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SA2154CT-GR,L3F from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Pins:3, Mounting Type:Surface Mount, Package / Case:SC-101, SOT-883, 2SA2154CT-GR,L3F pinout, 2SA2154CT-GR,L3F datasheet PDF, 2SA2154CT-GR,L3F amp .Beyond Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SA2154CT-GR,L3F ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation 2SA2154CT-GR,L3F


PNP 150°C TJ 100nA ICBO SC-101, SOT-883 Cut Tape (CT) Surface Mount

2SA2154CT-GR,L3F Overview


In this device, the DC current gain is 200 @ 2mA 6V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

2SA2154CT-GR,L3F Features


the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V


2SA2154CT-GR,L3F Applications


There are a lot of Toshiba Semiconductor and Storage
2SA2154CT-GR,L3F applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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