2SA2154CT-GR,L3F

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Mfr.Part #
2SA2154CT-GR,L3F
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
SC-101, SOT-883
Datasheet
Download
Description
TRANS PNP 50V 0.1A CST3
Stock
11,654
In Stock :
11,654

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
Published :
2003
Collector Base Voltage (VCBO) :
50V
Number of Pins :
3
Current - Collector Cutoff (Max) :
100nA ICBO
Packaging :
Cut Tape (CT)
Collector Emitter Voltage (VCEO) :
300mV
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
12 Weeks
Max Power Dissipation :
100mW
Max Breakdown Voltage :
50V
Frequency - Transition :
80MHz
Reach Compliance Code :
Unknown
Emitter Base Voltage (VEBO) :
5V
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA 6V
Max Collector Current :
100mA
Power - Max :
100mW
Package / Case :
SC-101, SOT-883
Collector Emitter Breakdown Voltage :
50V
Mounting Type :
Surface Mount
Operating Temperature :
150°C TJ
RoHS Status :
RoHS Compliant
Vce Saturation (Max) @ Ib, Ic :
300mV @ 10mA, 100mA
Mount :
Surface Mount
Datasheets
2SA2154CT-GR,L3F
Introducing Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SA2154CT-GR,L3F from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:SC-101, SOT-883, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, 2SA2154CT-GR,L3F pinout, 2SA2154CT-GR,L3F datasheet PDF, 2SA2154CT-GR,L3F amp .Beyond Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SA2154CT-GR,L3F ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation 2SA2154CT-GR,L3F


PNP 150°C TJ 100nA ICBO SC-101, SOT-883 Cut Tape (CT) Surface Mount

2SA2154CT-GR,L3F Overview


In this device, the DC current gain is 200 @ 2mA 6V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

2SA2154CT-GR,L3F Features


the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V


2SA2154CT-GR,L3F Applications


There are a lot of Toshiba Semiconductor and Storage
2SA2154CT-GR,L3F applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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