2SA2127-AE

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Mfr.Part #
2SA2127-AE
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS PNP 50V 2A 3MP
Stock
3,342
In Stock :
3,342

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Width :
4.7mm
Pin Count :
3
Transistor Element Material :
SILICON
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
400mV @ 50mA, 1A
Collector Emitter Breakdown Voltage :
50V
Transition Frequency :
420MHz
Max Power Dissipation :
1W
Current - Collector Cutoff (Max) :
1μA ICBO
Operating Temperature :
150°C TJ
Transistor Application :
SWITCHING
Collector Emitter Voltage (VCEO) :
50V
Terminal Finish :
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Max Collector Current :
2A
Terminal Position :
BOTTOM
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
Height :
8.5mm
Mounting Type :
Through Hole
Collector Base Voltage (VCBO) :
-50V
Length :
6mm
Max Frequency :
420MHz
Number of Terminations :
3
Published :
2012
Gain Bandwidth Product :
420MHz
Polarity/Channel Type :
PNP
Lead Free :
Lead Free
Number of Elements :
1
JEDEC-95 Code :
TO-226AE
Element Configuration :
Single
Packaging :
Tape and Box (TB)
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 2V
Max Breakdown Voltage :
50V
Collector Emitter Saturation Voltage :
-200mV
ECCN Code :
EAR99
Pbfree Code :
yes
RoHS Status :
RoHS Compliant
Transistor Type :
PNP
Emitter Base Voltage (VEBO) :
-6V
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SA2127-AE from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, 2SA2127-AE pinout, 2SA2127-AE datasheet PDF, 2SA2127-AE amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SA2127-AE ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SA2127-AE


PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

2SA2127-AE Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 2V DC current gain.As it features a collector emitter saturation voltage of -200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -6V can result in a high level of efficiency.There is a transition frequency of 420MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 2A volts.

2SA2127-AE Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at -6V
a transition frequency of 420MHz


2SA2127-AE Applications


There are a lot of ON Semiconductor
2SA2127-AE applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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