2SA2125-TD-E

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Mfr.Part #
2SA2125-TD-E
Manufacturer
onsemi
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 50V 3A PCP
Stock
890
In Stock :
890

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lead Free :
Lead Free
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Length :
4.5mm
Surface Mount :
yes
Packaging :
Tape and Reel (TR)
Number of Pins :
3
Package / Case :
TO-243AA
Max Frequency :
390MHz
Element Configuration :
Single
Pin Count :
3
Collector Emitter Breakdown Voltage :
50V
Reach Compliance Code :
not_compliant
Pbfree Code :
yes
hFE Min :
200
Current - Collector Cutoff (Max) :
1μA ICBO
Operating Temperature :
150°C TJ
Collector Emitter Voltage (VCEO) :
50V
JESD-609 Code :
e6
Mounting Type :
Surface Mount
Max Breakdown Voltage :
50V
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 2V
Published :
2004
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Saturation Voltage :
-250mV
Emitter Base Voltage (VEBO) :
-6V
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Max Collector Current :
3A
Width :
2.5mm
Max Power Dissipation :
3.5W
Factory Lead Time :
2 Weeks
Collector Base Voltage (VCBO) :
-50V
Transistor Type :
PNP
Gain Bandwidth Product :
390MHz
Vce Saturation (Max) @ Ib, Ic :
500mV @ 100mA, 2A
ECCN Code :
EAR99
Height :
1.5mm
Datasheets
2SA2125-TD-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SA2125-TD-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-243AA, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, 2SA2125-TD-E pinout, 2SA2125-TD-E datasheet PDF, 2SA2125-TD-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SA2125-TD-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SA2125-TD-E


PNP 150°C TJ 1μA ICBO PNP TO-243AA Tape & Reel (TR) Surface Mount

2SA2125-TD-E Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 2A.The emitter base voltage can be kept at -6V for high efficiency.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

2SA2125-TD-E Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at -6V


2SA2125-TD-E Applications


There are a lot of ON Semiconductor
2SA2125-TD-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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