2SA2125-TD-E
- Mfr.Part #
- 2SA2125-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A PCP
- Stock
- 890
- In Stock :
- 890
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Length :
- 4.5mm
- Surface Mount :
- yes
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Package / Case :
- TO-243AA
- Max Frequency :
- 390MHz
- Element Configuration :
- Single
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- yes
- hFE Min :
- 200
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 50V
- JESD-609 Code :
- e6
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Published :
- 2004
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -250mV
- Emitter Base Voltage (VEBO) :
- -6V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Max Collector Current :
- 3A
- Width :
- 2.5mm
- Max Power Dissipation :
- 3.5W
- Factory Lead Time :
- 2 Weeks
- Collector Base Voltage (VCBO) :
- -50V
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 390MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 2A
- ECCN Code :
- EAR99
- Height :
- 1.5mm
- Datasheets
- 2SA2125-TD-E

PNP 150°C TJ 1μA ICBO PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA2125-TD-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 2A.The emitter base voltage can be kept at -6V for high efficiency.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2SA2125-TD-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at -6V
2SA2125-TD-E Applications
There are a lot of ON Semiconductor
2SA2125-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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