2SA2119KT146
- Mfr.Part #
- 2SA2119KT146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 12V 0.5A SMT3
- Stock
- 19,346
- In Stock :
- 19,346
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- -6V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 260MHz
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 12V
- Terminal Finish :
- TIN SILVER COPPER
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 260MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- 2SA2119
- Collector Emitter Saturation Voltage :
- -100mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 10mA 2V
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 12V
- Polarity/Channel Type :
- PNP
- HTS Code :
- 8541.21.00.75
- Max Power Dissipation :
- 200mW
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Contact Plating :
- Copper, Silver, Tin
- Collector Emitter Voltage (VCEO) :
- 250mV
- Max Collector Current :
- 500mA
- Factory Lead Time :
- 13 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Power - Max :
- 200mW
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 200mA
- Collector Base Voltage (VCBO) :
- -15V
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Published :
- 2008
- Datasheets
- 2SA2119KT146

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SA2119KT146 Overview
This device has a DC current gain of 270 @ 10mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -100mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -6V to achieve high efficiency.In this part, there is a transition frequency of 260MHz.As a result, it can handle voltages as low as 12V volts.The maximum collector current is 500mA volts.
2SA2119KT146 Features
the DC current gain for this device is 270 @ 10mA 2V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 250mV @ 10mA, 200mA
the emitter base voltage is kept at -6V
a transition frequency of 260MHz
2SA2119KT146 Applications
There are a lot of ROHM Semiconductor
2SA2119KT146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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