2SA2112-AN
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- Mfr.Part #
- 2SA2112-AN
- Manufacturer
- onsemi
- Package / Case
- SC-71
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A 3NMP
- Stock
- 22,148
- In Stock ：
- 22,148
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- -6V
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- -135mV
- Gain Bandwidth Product :
- 390MHz
- Width :
- 2.5mm
- Published :
- 2012
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 50V
- Packaging :
- Tape and Reel (TR)
- Height :
- 4.5mm
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Current - Collector (Ic) (Max) :
- 3A
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 100mA, 2A
- hFE Min :
- 200
- Lifecycle Status :
- LIFETIME (Last Updated: 2 days ago)
- Max Collector Current :
- 3A
- Max Power Dissipation :
- 1W
- Surface Mount :
- yes
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Base Voltage (VCBO) :
- -50V
- Length :
- 6.9mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 10V
- Package / Case :
- SC-71
- Lead Free :
- Lead Free
- Max Frequency :
- 390MHz
- Pin Count :
- 3
- RoHS Status :
- RoHS Compliant
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- Datasheets
- 2SA2112-AN
PNP 150°C TJ 1μA ICBO PNP SC-71 Tape & Reel (TR) Through Hole
2SA2112-AN Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -135mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 100mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.During maximum operation, collector current can be as low as 3A volts.
2SA2112-AN Features
the DC current gain for this device is 200 @ 100mA 10V
a collector emitter saturation voltage of -135mV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at -6V
2SA2112-AN Applications
There are a lot of ON Semiconductor
2SA2112-AN applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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