2SA2072TLQ
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- Mfr.Part #
- 2SA2072TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 60V 3A CPT3
- Stock
- 29,016
- In Stock ：
- 29,016
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Max Collector Current :
- 3A
- Collector Emitter Saturation Voltage :
- -200mV
- JESD-609 Code :
- e2
- Gain Bandwidth Product :
- 180MHz
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Pin Count :
- 3
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Published :
- 2012
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 2V
- Emitter Base Voltage (VEBO) :
- -6V
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 40 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current - Collector (Ic) (Max) :
- 3A
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 500mV
- Operating Temperature :
- 150°C TJ
- HTS Code :
- 8541.29.00.75
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- -60V
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 1W
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 180MHz
- Radiation Hardening :
- No
- Datasheets
- 2SA2072TLQ
PNP 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SA2072TLQ Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Parts of this part have transition frequencies of 180MHz.During maximum operation, collector current can be as low as 3A volts.
2SA2072TLQ Features
the DC current gain for this device is 120 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 180MHz
2SA2072TLQ Applications
There are a lot of ROHM Semiconductor
2SA2072TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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