2SA2070(TE12L,F)
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- Mfr.Part #
- 2SA2070(TE12L,F)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 1A PW-MINI
- Stock
- 948
- In Stock ：
- 948
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 7V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 1W
- Collector Base Voltage (VCBO) :
- 50V
- Number of Pins :
- 4
- Mounting Type :
- Surface Mount
- Published :
- 2010
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Max Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 10mA, 300mA
- Collector Emitter Breakdown Voltage :
- 50V
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 200mV
- Package / Case :
- TO-243AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Datasheets
- 2SA2070(TE12L,F)
PNP 150°C TJ 100nA ICBO 1 Elements TO-243AA Tape & Reel (TR) Surface Mount
2SA2070(TE12L,F) Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 10mA, 300mA.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Collector current can be as low as 1A volts at its maximum.
2SA2070(TE12L,F) Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 200mV @ 10mA, 300mA
the emitter base voltage is kept at 7V
2SA2070(TE12L,F) Applications
There are a lot of Toshiba Semiconductor and Storage
2SA2070(TE12L,F) applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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