2SA2039-H
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- Mfr.Part #
- 2SA2039-H
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 5A TP
- Stock
- 780
- In Stock ：
- 780
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Base Part Number :
- 2SA2039
- Vce Saturation (Max) @ Ib, Ic :
- 430mV @ 100mA, 2A
- Mount :
- Through Hole
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Max Power Dissipation :
- 800mW
- Collector Emitter Voltage (VCEO) :
- 430mV
- Contact Plating :
- Lead, Tin
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Frequency - Transition :
- 360MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 800mW
- Published :
- 2012
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- hFE Min :
- 200
- Transistor Type :
- PNP
- Max Collector Current :
- 5A
- Packaging :
- Bulk
- Datasheets
- 2SA2039-H
PNP 1μA ICBO TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SA2039-H Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 5A volts.
2SA2039-H Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 430mV @ 100mA, 2A
the emitter base voltage is kept at 6V
2SA2039-H Applications
There are a lot of ON Semiconductor
2SA2039-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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