2SA2030T2L
- Mfr.Part #
- 2SA2030T2L
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PNP 12V 0.5A VMT3
- Stock
- 500
- In Stock :
- 500
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 10mA 2V
- Radiation Hardening :
- No
- Package / Case :
- SOT-723
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Published :
- 2008
- Terminal Finish :
- TIN COPPER
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Voltage - Rated DC :
- -12V
- Pin Count :
- 3
- Current Rating :
- -500mA
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- 2SA2030
- Max Collector Current :
- 500mA
- Power Dissipation :
- 150mW
- Collector Emitter Breakdown Voltage :
- 12V
- Max Power Dissipation :
- 150mW
- Terminal Form :
- Flat
- Contact Plating :
- Copper, Tin
- Number of Elements :
- 1
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 15V
- Collector Emitter Voltage (VCEO) :
- 12V
- Factory Lead Time :
- 13 Weeks
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 12V
- Collector Emitter Saturation Voltage :
- -100V
- Frequency :
- 260MHz
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- -6V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 200mA
- Number of Pins :
- 3
- Transistor Type :
- PNP
- JESD-609 Code :
- e2
- Transition Frequency :
- 260MHz
- Mounting Type :
- Surface Mount
- hFE Min :
- 270
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 260MHz
- Datasheets
- 2SA2030T2L

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-723 Tape & Reel (TR) Surface Mount
2SA2030T2L Overview
DC current gain in this device equals 270 @ 10mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -100V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 200mA.An emitter's base voltage can be kept at -6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.As a result, the part has a transition frequency of 260MHz.Breakdown input voltage is 12V volts.In extreme cases, the collector current can be as low as 500mA volts.
2SA2030T2L Features
the DC current gain for this device is 270 @ 10mA 2V
a collector emitter saturation voltage of -100V
the vce saturation(Max) is 250mV @ 10mA, 200mA
the emitter base voltage is kept at -6V
the current rating of this device is -500mA
a transition frequency of 260MHz
2SA2030T2L Applications
There are a lot of ROHM Semiconductor
2SA2030T2L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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