2SA2030T2L
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- Mfr.Part #
- 2SA2030T2L
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PNP 12V 0.5A VMT3
- Stock
- 500
- In Stock ：
- 500
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Factory Lead Time :
- 13 Weeks
- Emitter Base Voltage (VEBO) :
- -6V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Package / Case :
- SOT-723
- Collector Base Voltage (VCBO) :
- 15V
- Base Part Number :
- 2SA2030
- JESD-609 Code :
- e2
- Collector Emitter Voltage (VCEO) :
- 12V
- Current Rating :
- -500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -12V
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- -100V
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 200mA
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- hFE Min :
- 270
- Terminal Finish :
- TIN COPPER
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 10mA 2V
- Max Breakdown Voltage :
- 12V
- Max Power Dissipation :
- 150mW
- Max Collector Current :
- 500mA
- Transition Frequency :
- 260MHz
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 150mW
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 260MHz
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 260MHz
- Contact Plating :
- Copper, Tin
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Published :
- 2008
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 12V
- Radiation Hardening :
- No
- Pin Count :
- 3
- Terminal Form :
- Flat
- Datasheets
- 2SA2030T2L
2SA2030T2L Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-723 Tape & Reel (TR) Surface Mount
2SA2030T2L Overview
DC current gain in this device equals 270 @ 10mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -100V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 200mA.An emitter's base voltage can be kept at -6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.As a result, the part has a transition frequency of 260MHz.Breakdown input voltage is 12V volts.In extreme cases, the collector current can be as low as 500mA volts.
2SA2030T2L Features
the DC current gain for this device is 270 @ 10mA 2V
a collector emitter saturation voltage of -100V
the vce saturation(Max) is 250mV @ 10mA, 200mA
the emitter base voltage is kept at -6V
the current rating of this device is -500mA
a transition frequency of 260MHz
2SA2030T2L Applications
There are a lot of ROHM Semiconductor
2SA2030T2L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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