2SA2029T2LR
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- Mfr.Part #
- 2SA2029T2LR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A VMT3
- Stock
- 7,870
- In Stock ：
- 7,870
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 1mA 6V
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Collector Base Voltage (VCBO) :
- 60V
- Pin Count :
- 3
- Element Configuration :
- Single
- Continuous Collector Current :
- -150mA
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- Dual
- Transition Frequency :
- 140MHz
- Collector Emitter Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- Base Part Number :
- 2SA2029
- Factory Lead Time :
- 13 Weeks
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Flat
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e2
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 140MHz
- Frequency :
- 140MHz
- Package / Case :
- SOT-723
- Width :
- 800μm
- Max Collector Current :
- 150mA
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 6V
- Height :
- 500μm
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 50V
- Contact Plating :
- Copper, Tin
- Power Dissipation :
- 150mW
- Published :
- 2009
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Length :
- 1.2mm
- Max Power Dissipation :
- 150mW
- hFE Min :
- 120
- Collector Emitter Saturation Voltage :
- -500mV
- Datasheets
- 2SA2029T2LR
2SA2029T2LR Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-723 Tape & Reel (TR) Surface Mount
2SA2029T2LR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 1mA 6V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -150mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 140MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 150mA volts can be achieved.
2SA2029T2LR Features
the DC current gain for this device is 180 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 140MHz
2SA2029T2LR Applications
There are a lot of ROHM Semiconductor
2SA2029T2LR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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