2SA1900T100Q
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- Mfr.Part #
- 2SA1900T100Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 1A MPT3
- Stock
- 32
- In Stock ：
- 32
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 2W
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Number of Pins :
- 4
- Terminal Finish :
- TIN COPPER
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Contact Plating :
- Copper, Tin
- Base Part Number :
- 2SA1900
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- Current Rating :
- -1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- -5V
- Max Breakdown Voltage :
- 50V
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 150MHz
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- -50V
- JESD-30 Code :
- R-PSSO-F3
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 50V
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- -50V
- Package / Case :
- TO-243AA
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 2W
- JESD-609 Code :
- e2
- hFE Min :
- 120
- Transition Frequency :
- 150MHz
- Published :
- 1998
- Max Collector Current :
- 1A
- Collector Emitter Voltage (VCEO) :
- 400mV
- Terminal Form :
- Flat
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Pbfree Code :
- yes
- Datasheets
- 2SA1900T100Q
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA1900T100Q Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 500mA 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 1A volts.
2SA1900T100Q Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
2SA1900T100Q Applications
There are a lot of ROHM Semiconductor
2SA1900T100Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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