2SA1727TLQ
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- Mfr.Part #
- 2SA1727TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 400V 0.5A CPT3
- Stock
- 1,994
- In Stock ：
- 1,994
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 2
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Voltage - Rated DC :
- -400V
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 1W
- Terminal Form :
- Gull wing
- Contact Plating :
- Copper, Tin
- Element Configuration :
- Single
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 5V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 10mA, 100mA
- Current Rating :
- -500mA
- Max Collector Current :
- 500mA
- hFE Min :
- 120
- JESD-609 Code :
- e2
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 12MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.29.00.95
- Max Breakdown Voltage :
- 400V
- Collector Emitter Breakdown Voltage :
- 400V
- Power - Max :
- 1W
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 400V
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Base Part Number :
- 2SA1727
- Pin Count :
- 3
- Transition Frequency :
- 12MHz
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Published :
- 1998
- Emitter Base Voltage (VEBO) :
- 7V
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 400V
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheets
- 2SA1727TLQ
PNP 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SA1727TLQ Overview
In this device, the DC current gain is 120 @ 50mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 10mA, 100mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 12MHz.Input voltage breakdown is available at 400V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
2SA1727TLQ Features
the DC current gain for this device is 120 @ 50mA 5V
the vce saturation(Max) is 1V @ 10mA, 100mA
the emitter base voltage is kept at 7V
the current rating of this device is -500mA
a transition frequency of 12MHz
2SA1727TLQ Applications
There are a lot of ROHM Semiconductor
2SA1727TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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