2SA1579T106S
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- Mfr.Part #
- 2SA1579T106S
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.05A UMT3
- Stock
- 36,697
- In Stock ：
- 36,697
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e1
- Transition Frequency :
- 140MHz
- Base Part Number :
- 2SA1579
- Max Breakdown Voltage :
- 120V
- Gain Bandwidth Product :
- 140MHz
- Max Power Dissipation :
- 200mW
- Current Rating :
- -50mA
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Lead Free :
- Lead Free
- Factory Lead Time :
- 10 Weeks
- HTS Code :
- 8541.21.00.75
- Contact Plating :
- Copper, Silver, Tin
- Voltage - Rated DC :
- -120V
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Power - Max :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 6V
- Max Collector Current :
- 50mA
- Collector Emitter Breakdown Voltage :
- 120V
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Package / Case :
- SC-70, SOT-323
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 120V
- hFE Min :
- 270
- Pin Count :
- 3
- Terminal Position :
- Dual
- Published :
- 2001
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 120V
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Datasheets
- 2SA1579T106S
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SA1579T106S Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 2mA 6V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -50mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 140MHz.Single BJT transistor can take a breakdown input voltage of 120V volts.During maximum operation, collector current can be as low as 50mA volts.
2SA1579T106S Features
the DC current gain for this device is 180 @ 2mA 6V
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is -50mA
a transition frequency of 140MHz
2SA1579T106S Applications
There are a lot of ROHM Semiconductor
2SA1579T106S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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